On the mechanism of enhancing the nucleation behavior of UNCD films by Mo-coating

被引:13
作者
Chen, Huang-Chin [1 ]
Liu, Keng-Fu [2 ]
Tai, Nyan-Hua [2 ]
Pong, Way-Faung [1 ]
Lin, I-Nan [1 ]
机构
[1] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
Ultra-nanocrystalline diamond films; Molybdenum coating; Transmission electron microscopy; DIAMOND NUCLEATION; GROWTH; SILICON;
D O I
10.1016/j.diamond.2009.11.020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Enhanced nucleation behavior for ultra-nanocrystalline diamond on Si-substrates via the utilization of Mo-coating was observed. Spectroscopic examinations indicated that the mechanism of enhancement is the formation of Mo2C phase, which hindered the inward diffusion of carbon species into the substrate materials. The diamonds may either nucleate directly on Mo2C-layer or via the formation of transition phases, the graphite. The incoming carbons may also react with Mo2C phase to form MoC phase or form the graphite phase prior to the induction of diamond nuclei. In all cases. the carbons accumulated rapidly due the presence of a Mo2C (or MoC) layer, triggering the formation of diamond nuclei. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:134 / 137
页数:4
相关论文
共 14 条
[1]   Novel two stage method for growth of highly transparent nano-crystalline diamond films [J].
Bhusari, DM ;
Yang, JR ;
Wang, TY ;
Chen, KH ;
Lin, ST ;
Chen, LC .
MATERIALS LETTERS, 1998, 36 (5-6) :279-283
[2]   Bonding structure in nitrogen doped ultrananocrystalline diamond [J].
Birrell, J ;
Gerbi, JE ;
Auciello, O ;
Gibson, JM ;
Gruen, DM ;
Carlisle, JA .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5606-5612
[3]  
CARLISLE JA, 2003, ELECTROCHEMICAL SOC, V28
[4]   Effects of pretreatment processes on improving the formation of ultrananocrystalline diamond [J].
Chen, Li-Ju ;
Tai, Nyan-Hwa ;
Lee, Chi-Young ;
Lin, I-Nan. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)
[5]   Effect of surface treatments on the electronic properties of ultra-nanocrystalline diamond films [J].
Dong, C. L. ;
Chen, S. S. ;
Chiou, J. W. ;
Chen, Y. Y. ;
Guo, J. -H. ;
Cheng, H. F. ;
Lin, I. N. ;
Chang, C. L. .
DIAMOND AND RELATED MATERIALS, 2008, 17 (7-10) :1150-1153
[6]   Origin of the 1150-cm-1 Raman mode in nanocrystalline diamond -: art. no. 121405 [J].
Ferrari, AC ;
Robertson, J .
PHYSICAL REVIEW B, 2001, 63 (12)
[7]   A nucleation site and mechanism leading to epitaxial growth of diamond films [J].
Lee, ST ;
Peng, HY ;
Zhou, XT ;
Wang, N ;
Lee, CS ;
Bello, I ;
Lifshitz, Y .
SCIENCE, 2000, 287 (5450) :104-106
[8]   Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique [J].
Lee, YC ;
Lin, SJ ;
Pradhan, D ;
Lin, IN .
DIAMOND AND RELATED MATERIALS, 2006, 15 (2-3) :353-356
[9]   STUDIES ON NUCLEATION PROCESS IN DIAMOND CVD - AN OVERVIEW OF RECENT DEVELOPMENTS [J].
LIU, HM ;
DANDY, DS .
DIAMOND AND RELATED MATERIALS, 1995, 4 (10) :1173-1188
[10]   INFLUENCE ON DIAMOND NUCLEATION OF THE CARBON CONCENTRATION NEAR THE SUBSTRATE SURFACE [J].
MICHAU, D ;
TANGUY, B ;
DEMAZEAU, G ;
COUZI, M ;
CAVAGNAT, R .
DIAMOND AND RELATED MATERIALS, 1993, 2 (01) :19-23