Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

被引：28

作者：

Hwang, J. S. ^{[1
]}

Gokarna, A.

Cho, Yong-Hoon

Son, J. K.

Lee, S. N.

Sakong, T.

Paek, H. S.

Nam, O. H.

Park, Y.

机构：

[1] Chungbuk Natl Univ, Dept Phys, Natl Res Lab Nano Bio Photon, Phys Program BK21, Cheongju 361763, South Korea

[2] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期

关键词：

D O I：

10.1063/1.2716313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct comparison of optical properties and carrier dynamics of InGaN multiple quantum well (MQW) laser diode structures grown on pendeo epitaxial (PE)-GaN and sapphire substrates is reported. A strong increase in quantum efficiency and a dramatic reduction in stimulated emission threshold are observed for InGaN MQWs on PE-GaN substrates as compared to MQWs on sapphire substrates. Based on temperature-dependent time-resolved optical analysis, the authors find that a significant increase in nonradiative lifetime due to suppressed dislocation density plays an important role in enhancing optical properties of InGaN MQWs grown on PE-GaN substrates, resulting in radiative-process dominant emission even at room temperature. (c) 2007 American Institute of Physics.

引用

页数：3

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