Multi-layered hydrogenated p-type microcrystalline silicon windows for a-Si:H thin film solar cells on opaque substrates

被引:3
作者
Lee, Yoo Jeong [1 ,2 ]
Lee, Seoung Hyun [1 ,2 ]
Schropp, Ruud E. I. [3 ]
Lee, Kyu-Sung [1 ]
Lim, Jung Wook [1 ,2 ]
Yun, Sun Jin [1 ,2 ]
机构
[1] Elect & Telecommun Res Inst, Informat & Commun Core Technol Res Lab, 218 Gajeongno, Daejeon 305700, South Korea
[2] Univ Sci & Technol, Dept Adv Device Engn, 217 Gajeongno, Daejeon 305350, South Korea
[3] Eindhoven Univ Technol TU E, Dept Appl Phys Plasma & Mat Proc, POB 513, NL-5600 MB Eindhoven, Netherlands
关键词
a-Si; Solar cell; Nip-structure; Multi-layered p-Si; H-2-damage; LAYER; TEMPERATURE; TRANSITION;
D O I
10.1016/j.ijhydene.2016.03.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effects of multi-layered p-type microcrystalline (mu c-) Si:H windows on the performance of substrate-type amorphous Si:H thin film solar cells on opaque substrates were investigated. The results were well explained in terms of H-2-plasma-induced damage (HPID) at the p/i-interface and the near-interface region of the light-absorbing layer. The mu c-Si:H was deposited using plasma enhanced chemical vapor deposition in a H-2-rich atmosphere. A high microcrystalline volume fraction was obtained with a high H-2 dilution ratio, which can cause considerable HPID. Cell efficiency was enhanced with a multi-layered p-type mu c-Si:H composed of films with low and high crystalline volume fraction, compared to cells with single-layered mu c-Si:H. In the multi-layered p-type mu c-Si:H, the low crystalline film was placed on an i-Si:H layer to reduce HPID. The present work demonstrated that HPID was reduced at the p/i-interface and the near-interface region of the light-absorbing layer, and that the quality of the p-type mu c-Si:H needs to be a significant consideration to achieve high efficiency. Copyright (C) 2016, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:6240 / 6246
页数:7
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