Electrically detected magnetic resonance of near-interface defects in Si pn-junction structures with LOCOS isolation

Electrically detected magnetic resonance (EDMR) measurements on planar Si pn-junctions with LOGOS isolation show different types of point defects. We observe P-b-centers at the SiO2/Si interface and detect for the first time via EDMR the so-called "74G doublet'' - hydrogen-complexed oxygen vacancies in SiO2 (LOCOS isolation). The location of the probed oxide defects has to be close enough to the SiO2/Si interface so that a communication with the junction current can take place. (C) 2000 Elsevier Science B.V. All rights reserved.