g-factor tuning in self-assembled quantum dots

被引:16
作者
Sheng, Weidong [1 ]
机构
[1] Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China
关键词
angular momentum; excitons; gallium arsenide; g-factor; ground states; III-V semiconductors; indium compounds; semiconductor quantum dots; tight-binding calculations; SPIN;
D O I
10.1063/1.3367707
中图分类号
O59 [应用物理学];
学科分类号
摘要
The possibility of electrical tuning of exciton g-factors in self-assembled InAs/GaAs quantum dots is explored theoretically by means of a tight-binding-like effective bond-orbital approach. The electron g-factor in the dots of various sizes is found to exhibit very little change over a broad range of the field strength. In contrast, the ground hole state in the dots of high aspect ratio is seen very sensitive to the applied field, its g-factor even changes the sign with the field. The distinct behavior of the electron and hole g-factors in the presence of electric field is explained in terms of nonzero envelope orbital angular momentum carried by the hole states.
引用
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页数:3
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共 19 条
  • [1] Electrically controllable g tensors in quantum dot molecules
    Andlauer, Till
    Vogl, Peter
    [J]. PHYSICAL REVIEW B, 2009, 79 (04)
  • [2] Challenges for semiconductor spintronics
    Awschalom, David D.
    Flatte, Michael E.
    [J]. NATURE PHYSICS, 2007, 3 (03) : 153 - 159
  • [3] Electrically tunable g factors in quantum dot molecular spin states
    Doty, M. F.
    Scheibner, M.
    Ponomarev, I. V.
    Stinaff, E. A.
    Bracker, A. S.
    Korenev, V. L.
    Reinecke, T. L.
    Gammon, D.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (19)
  • [4] g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
    Larsson, M.
    Nilsson, H. A.
    Hardtdegen, H.
    Xu, H. Q.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (19)
  • [5] Spin splitting of the electron ground states of InAs quantum dots
    Medeiros-Ribeiro, G
    Pinheiro, MVB
    Pimentel, VL
    Marega, E
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (22) : 4229 - 4231
  • [6] Electrical tuning of the g factor of single self-assembled quantum dots
    Nakaoka, T.
    Tarucha, S.
    Arakawa, Y.
    [J]. PHYSICAL REVIEW B, 2007, 76 (04)
  • [7] Tuning of g-factor in self-assembled In(Ga)As quantum dots through strain engineering -: art. no. 205301
    Nakaoka, T
    Saito, T
    Tatebayashi, J
    Hirose, S
    Usuki, T
    Yokoyama, N
    Arakawa, Y
    [J]. PHYSICAL REVIEW B, 2005, 71 (20)
  • [8] Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots -: art. no. 235337
    Nakaoka, T
    Saito, T
    Tatebayashi, J
    Arakawa, Y
    [J]. PHYSICAL REVIEW B, 2004, 70 (23): : 1 - 8
  • [9] Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots
    Nilsson, Henrik A.
    Caroff, Philippe
    Thelander, Claes
    Larsson, Marcus
    Wagner, Jakob B.
    Wernersson, Lars-Erik
    Samuelson, Lars
    Xu, H. Q.
    [J]. NANO LETTERS, 2009, 9 (09) : 3151 - 3156
  • [10] Coherent control of a single electron spin with electric fields
    Nowack, K. C.
    Koppens, F. H. L.
    Nazarov, Yu. V.
    Vandersypen, L. M. K.
    [J]. SCIENCE, 2007, 318 (5855) : 1430 - 1433