Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO2-Pt sandwich

被引:64
作者
Plecenik, T. [1 ]
Mosko, M. [1 ,2 ]
Haidry, A. A. [1 ]
Durina, P. [1 ]
Truchly, M. [1 ]
Grancic, B. [1 ]
Gregor, M. [1 ]
Roch, T. [1 ]
Satrapinskyy, L. [1 ]
Moskova, A. [2 ]
Mikula, M. [1 ]
Kus, P. [1 ]
Plecenik, A. [1 ]
机构
[1] Comenius Univ, Fac Math Phys & Informat, Dept Expt Phys, Bratislava 84248, Slovakia
[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
关键词
Hydrogen; Gas sensor; Nanoscale; Sandwich; Room temperature; TiO2; HYDROGEN; OXIDES; SIZE;
D O I
10.1016/j.snb.2014.10.003
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Development of fast highly-sensitive semiconductor gas sensors operating at room temperature, which would be compatible with semiconductor technology, remains a challenge for researchers. Here we present such sensor based on a nanoscale Pt-TiO2-Pt sandwich. The sensor consists of a thin (similar to 30 nm) nanocrystalline TiO2 layer with similar to 10 nm grains, placed between the bottom Pt electrode layer and top Pt electrode shaped as a long narrow (width w down to 80 nm) stripe. If we decrease w to similar to 100 nm and below, the sensor exposed to air with 1% H-2 exhibits the increase of response (R-air/R-H2) up to similar to 10(7) and decrease of the reaction time to only a few seconds even at room temperature. The sensitivity increase is due to a nontrivial non-ohmic effect, a sudden decrease (by three orders of magnitude) of the electrical resistance with decreasing w for w similar to 100 nm. This non-ohmic effect is explained as a consequence of two nano scale-related effects: the hydrogen- diffusion-controlled spatially-inhomogeneous resistivity of the TiO2 layer, combined with onset of the hot-electron-temperature instability when the tiny grains are subjected to high electric field. (C) 2014 The Authors. Published by Elsevier B.V.
引用
收藏
页码:351 / 361
页数:11
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