Study of the Effects Related to the Electric Reverse Stress Currents on the Mono-Si Solar Cell Electrical Parameters

The main objective of this work is to study, characterize finely the defects created in photovoltaic cells made from mono crystalline silicon wafer based on semiconductor has continued its operation under extreme conditions (electrical stress). We will demonstrate the effect of reverse stress current injected in solar cell structure on the I-V and C-V characteristics under dark conditions at room temperature for several time periods. These experimental measurements were numerical analyzed using double exponential model. Experimental evidence showed that different levels of reverse currents are confirmed to be a major degrading factor affecting the performance, efficiency, and power of solar modules. The experimental results were consistent with computational predictions.