A monolithic dual-band HgCdTe infrared detector

被引：0

作者：

Musca, CA ^{[1
]}

Siliquini, JF ^{[1
]}

Parish, G ^{[1
]}

Dell, JM ^{[1
]}

Faraone, L ^{[1
]}

机构：

[1] Univ Western Australia, Dept Elect & Elect Engn, Nedlands, WA 6907, Australia

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

infrared; multispectral; photodetector; HgCdTe;

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 and 8-12 mu m, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The structure is the first reported on-pixel registered monolithic dual-band HgCdTe photoconductor. The technology is demonstrated by fabricating HgCdTe photoconductive detectors and the fabricated detectors have an MWIR cutoff of 5.0 mu m, and LWIR cutoff of 10.5 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1284 / 1287

页数：4

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