Theoretical study on lower electronic states of the FeSi molecule

被引:5
作者
Sekiya, M
Miwa, K
Tanaka, K
Yoshimine, M
机构
[1] Hokkaido Univ, Div Chem, Grad Sch Sci, Kita Ku, Sapporo, Hokkaido 0600810, Japan
[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95129 USA
关键词
D O I
10.1080/00268970210159442
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The low lying electronic states of the FeSi molecule have been investigated by performing complete active space self-consistent field (CASSCF) and multireference single and double excitation configuration interaction (MRSDCI) calculations. Although the classification of the ground state was not established, the results of the MRSDCI calculations suggest that the ground state of FeSi is (3)Delta, and the lowest excited state is (5)Pi whose transition energy is 0.36 eV including the Davidson-type Q correction. The R-e given by MRSDCI with Q correction is 2.23 Angstrom for (3)Delta and 2.19 Angstrom for (5)Pi. The spectroscopic constants and dipole moments of the low lying (5)Delta and (3)Pi states as well as the (3)Delta and (5)Pi states are also evaluated. The bonding nature of FeSi in the (3)Delta state is discussed in comparison with the FeC molecule.
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页码:99 / 104
页数:6
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