Optimization of backside micromachined CMOS inductors for RF applications

被引：0
|
作者：
Ozgur, M [1 ]
Zaghloul, ME [1 ]
Gaitan, M [1 ]
机构：
[1] George Washington Univ, Dept Elect Engn & Comp Sci, Washington, DC 20052 USA
来源：
ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL V: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY | 2000年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The quality factor of backside micromachined CMOS inductors is optimized for high frequency applications. Up to 90% improvement of the peak quality factor is predicted for 10 nH inductors according to the simulations over previously published results in this technology. Extensive tests will be performed for the fabricated inductors with an improved post-processing procedure.
引用
收藏
页码：185 / 188
页数：4
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