A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

被引：52

作者：

Aldana, S. ^{[1
]}

Garcia-Fernandez, P. ^{[1
]}

Rodriguez-Fernandez, Alberto ^{[3
,4
]}

Romero-Zaliz, R.

Gonzalez, M. B. ^{[2
]}

Jimenez-Molinos, F. ^{[1
]}

Campabadal, F. ^{[2
]}

Gomez-Campos, F. ^{[1
]}

Roldan, J. B. ^{[1
]}

机构：

[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Computadores, Avd Fuentenueva S-N, E-18071 Granada, Spain

[2] CSIC, IMB, CNM, Campus UAB, Bellaterra 08193, Spain

[3] Univ Granada, Escuela Tecn Super Ingn Informat Telecomunicat, Dept Ciencias Computac & Inteligencia Artificial, E-18071 Granada, Spain

[4] Univ Autonoma Barcelona, Dept Enginyeria Elect, Edifici Q, Bellaterra 08193, Spain

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 33期

关键词：

resistive switching memory; variability; simulation; conductive filaments; kinetic Monte Carlo; PARAMETER VARIATION; MEMORY; NANOIONICS; MECHANISMS; DEVICES;

D O I：

10.1088/1361-6463/aa7939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO2/Si-n(+) unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.

引用

页数：10

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