Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems

被引:78
作者
Hamamoto, Keita [1 ]
Ezawa, Motohiko [1 ]
Kim, Kun Woo [2 ]
Morimoto, Takahiro [3 ]
Nagaosa, Naoto [1 ,4 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] Korea Inst Adv Study, Sch Phys, Seoul 02455, South Korea
[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[4] RIKEN, Ctr Emergent Matter Sci, Wako, Saitama 3510198, Japan
关键词
CONVERSION; ANISOTROPY;
D O I
10.1103/PhysRevB.95.224430
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin current plays a central role in spintronics. In particular, finding more efficientways to generate spin current has been an important issue and has been studied actively. For example, representative methods of spin-current generation include spin-polarized current injections from ferromagnetic metals, the spin Hall effect, and the spin battery. Here, we theoretically propose a mechanism of spin-current generation based on nonlinear phenomena. By using Boltzmann transport theory, we showthat a simple application of the electric field E induces spin current proportional to E-2 in noncentrosymmetric spin-orbit coupled systems. We demonstrate that the nonlinear spin current of the proposed mechanism is supported in the surface state of three-dimensional topological insulators and two-dimensional semiconductors with the Rashba and/or Dresselhaus interaction. In the latter case, the angular dependence of the nonlinear spin current can be manipulated by the direction of the electric field and by the ratio of the Rashba and Dresselhaus interactions. We find that the magnitude of the spin current largely exceeds those in the previous methods for a reasonable magnitude of the electric field. Furthermore, we show that application of ac electric fields (e.g., terahertz light) leads to the rectifying effect of the spin current, where dc spin current is generated. These findings will pave a route to manipulate the spin current in noncentrosymmetric crystals.
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页数:9
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共 42 条
[1]  
Ando K, 2011, NAT MATER, V10, P655, DOI [10.1038/nmat3052, 10.1038/NMAT3052]
[2]   ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].
DATTA, S ;
DAS, B .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667
[3]   Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene [J].
Dushenko, S. ;
Ago, H. ;
Kawahara, K. ;
Tsuda, T. ;
Kuwabata, S. ;
Takenobu, T. ;
Shinjo, T. ;
Ando, Y. ;
Shiraishi, M. .
PHYSICAL REVIEW LETTERS, 2016, 116 (16)
[4]   Theory of spin hall conductivity in n-doped GaAs -: art. no. 166605 [J].
Engel, HA ;
Halperin, BI ;
Rashba, EI .
PHYSICAL REVIEW LETTERS, 2005, 95 (16)
[5]   Experimental separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells [J].
Ganichev, SD ;
Bel'kov, VV ;
Golub, LE ;
Ivchenko, EL ;
Schneider, P ;
Giglberger, S ;
Eroms, J ;
De Boeck, J ;
Borghs, G ;
Wegscheider, W ;
Weiss, D ;
Prettl, W .
PHYSICAL REVIEW LETTERS, 2004, 92 (25) :256601-1
[6]   Photogalvanic effects in quantum wells [J].
Ganichev, SD ;
Ivchenko, EL ;
Prettl, W .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 14 (1-2) :166-171
[7]   Spin-galvanic effect [J].
Ganichev, SD ;
Ivchenko, EL ;
Bel'kov, VV ;
Tarasenko, SA ;
Sollinger, M ;
Weiss, D ;
Wegscheider, W ;
Prettl, W .
NATURE, 2002, 417 (6885) :153-156
[8]   Conversion of spin into directed electric current in quantum wells [J].
Ganichev, SD ;
Ivchenko, EL ;
Danilov, SN ;
Eroms, J ;
Wegscheider, W ;
Weiss, D ;
Prettl, W .
PHYSICAL REVIEW LETTERS, 2001, 86 (19) :4358-4361
[9]   Spin-valve effects in a semiconductor field-effect transistor: A spintronic device [J].
Gardelis, S ;
Smith, CG ;
Barnes, CHW ;
Linfield, EH ;
Ritchie, DA .
PHYSICAL REVIEW B, 1999, 60 (11) :7764-7767
[10]   Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3 [J].
Glinka, Yuri D. ;
Babakiray, Sercan ;
Johnson, Trent A. ;
Bristow, Alan D. ;
Holcomb, Mikel B. ;
Lederman, David .
APPLIED PHYSICS LETTERS, 2013, 103 (15)