InP/InGaAs Coreshell Nanowire Heterostructures: Growth and Characterisation

被引：0
|
作者：
Ramesh, V. [1 ]
Gao, Q. [1 ]
Tan, H. H.
Paiman, S. [1 ]
Guo, Y. N. [2 ]
Zou, J. [2 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Univ Queensland, Mat Engn, St Lucia, Qld 4072, Australia
来源：
PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010) | 2010年
基金：
澳大利亚研究理事会;
关键词：
INDIUM-PHOSPHIDE NANOWIRES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVO). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.
引用
收藏
页码：83 / 84
页数：2
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