Can carbon nanotubes extend the lifetime of on-chip electrical interconnections?

被引：0

作者：

Banerjee, Kaustav ^{[1
]}

Im, Sungjun ^{[1
]}

Srivastava, Navin ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2006 1ST INTERNATIONAL CONFERENCE ON NANO-NETWORKS AND WORKSHOPS | 2006年

关键词：

carbon nanotubes; copper; interconnects; VLSI;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Current carrying capacity of copper interconnects is being severely limited due to their increasing resistivity with scaling and reliability constraints. Metallic carbon nanotubes (CNT) are promising candidates that can potentially address the challenges faced by copper and thereby extend the lifetime of on-chip electrical interconnects. This paper provides an overview of the state-of-the-art of CNT interconnect research and discusses both advantages and challenges of this emerging nanotechnology.

引用

页码：120 / +

页数：2

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