The influence of rf induced bias on the properties of diamond-like carbon films prepared using ECR-CVD

被引:18
作者
Yoon, SF [1 ]
Yang, H [1 ]
Rusli [1 ]
Ahn, J [1 ]
Zhang, Q [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
chemical vapor deposition (CVD); diamond-like carbon; ECR; films;
D O I
10.1007/s11664-998-0336-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The deposition of diamond-like carbon (DLC) films from a mixture of hydrogen and methane using the electron resonance chemical vapor deposition (ECR-CVD) method with radio-frequency (rf) bias is reported. The structural characteristics of the DLC films were characterized using Raman spectroscopy, The effects of the self-generated de bias resulting from the rf power on the optical gap, Raman spectra, infrared (IR) absorption, and film hardness in depositions carried out at 7 and 15 mTorr process pressures were investigated. Under conditions of 100 Vir microwave power and for de bias variation ranging from -10 to -200 V, there is evidence from Raman scattering analysis to show an increase in the DLC-like characteristic in films deposited at low de bias at both process pressures. The variation of the D and G line peak position and integrated intensity ratio (I-D/I-G) in the Raman spectra correlates well with the film hardness profile. There does not seem to be a relationship between the variation of the C-H absorption peak intensity in the IR spectra (bonded hydrogen content) and the optical gap, although films with the highest optical gap tend to show a relatively higher C-K absorption peak intensity in the IR spectra. Films deposited at high de bias showed a reduction in the C-H infrared absorption, suggesting a reduction in the bonded hydrogen content.
引用
收藏
页码:44 / 50
页数:7
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