Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon

被引：77

作者：

Wang, Renjie ^{[1
]}

Nguyen, Hieu P. T. ^{[1
,2
]}

Connie, Ashfiqua T. ^{[1
]}

Lee, J. ^{[3
]}

Shih, Ishiang ^{[1
]}

Mi, Zetian ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada

[2] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

[3] Samsung Adv Inst Technol, Nano Elect Lab, Suwon 443803, Gyeonggi Do, South Korea

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 25期

基金：

加拿大自然科学与工程研究理事会;

关键词：

HETEROSTRUCTURES; EFFICIENT;

D O I：

10.1364/OE.22.0A1768

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs. (C) 2014 Optical Society of America

引用

页码：A1768 / A1775

页数：8

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