C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE

被引：29

作者：

Shigematsu, H. ^{[1
]}

Inoue, Y. ^{[1
]}

Akasegawa, A. ^{[1
]}

Yamada, M. ^{[1
]}

Masuda, S. ^{[1
]}

Kamada, Y. ^{[1
]}

Yamada, A. ^{[1
]}

Kanamura, A. ^{[1
]}

Ohki, T. ^{[1
]}

Makiyama, K. ^{[1
]}

Okamoto, N. ^{[1
]}

Imanishi, K. ^{[1
]}

Kikkawa, T. ^{[1
]}

Joshin, K. ^{[1
]}

Hara, N. ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

关键词：

C-band; X-band; PAE; GaN; power amplifiers;

D O I：

10.1109/MWSYM.2009.5165934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mu m GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mu m GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GM. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.

引用

页码：1265 / +

页数：2

共 50 条

[31] An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier
Huang, Li-Hsien
Chiou, Hwann-Kaeo
2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2020, : 257 - 259
[32] 10W Class High Power C-Band Rectifier Using GaN HEMT
Yoshida, Satoshi
Nishikawa, Kenjiro
Kawasaki, Shigeo
2019 IEEE MTT-S WIRELESS POWER TRANSFER CONFERENCE (WPTC) / IEEE PELS WORKSHOP ON EMERGING TECHNOLOGIES: WIRELESS POWER (WOW) / WIRELESS POWER WEEK (WPW 2019), 2019, : 595 - 598
[33] X-band 100 W-class Broadband High Power Amplifier Using High Power Density GaN-HEMTs
Fukunaga, Kei
Sugitani, Takumi
Yamaguchi, Yutaro
Tsunami, Daisuke
Hangai, Masatake
Shinjo, Shintaro
2020 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2020, : 67 - 69
[34] X-band wideband 5 W GaN MMIC power amplifier with large-signal gain equalization
Camarchia, Vittorio
Fang, Jie
Ghione, Giovanni
Rubio, Jorge Moreno
Pirola, Marco
Quaglia, Roberto
2012 WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC), 2012,
[35] A X-band 20W Power Amplifier MMIC with 50% Bandwidth Using 6-inch GaN Technology
Yu, Gang
Gong, Linyuan
Zhang, Jiaqi
Wu, Yunqiu
Xie, Xiaolin
Zhang, Ying
Xu, Yuehang
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 408 - 410
[36] An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
Chen, Ruitao
Li, Ruchun
Zhou, Shouli
Chen, Shi
Huang, Jianhua
Wang, Zhiyu
ELECTRONICS, 2019, 8 (01)
[37] Design of a 25W C-Band Power Amplifier for Satellite Communication
Kalyan, Robin
Ghosh, Basudeb
Sreekavya, M. K.
Harshit, Kumar
Bindu, K. R.
Lankapalli, Suvarna
2021 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2021,
[38] A Ka-Band 40 W Output Power and 30 % PAE GaN MMIC Power Amplifier for Satellite Communication
Nakatani, Keigo
Yamaguchi, Yutaro
Tsuru, Masaomi
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021), 2021, : 285 - 288
[39] An x-band 250W solid-state power amplifier using GaN power HEMTs
Kanto, Kazuhiro
Satomi, Akihiro
Asahi, Yasuaki
Kashiwabara, Yasushi
Matsushita, Keiichi
Takagi, Kazutaka
2008 IEEE RADIO AND WIRELESS SYMPOSIUM, VOLS 1 AND 2, 2008, : 77 - 80
[40] A 10 W X-Band Balanced Power Amplifier with Harmonic Rejection for SATCOM Applications
Pazhouhesh, Pouria
Pearson, Katherine E.
Kitchen, Jennifer
2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS, 2023,

← 1 2 3 4 5 →