C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE

被引：29
|
作者：
Shigematsu, H. [1 ]
Inoue, Y. [1 ]
Akasegawa, A. [1 ]
Yamada, M. [1 ]
Masuda, S. [1 ]
Kamada, Y. [1 ]
Yamada, A. [1 ]
Kanamura, A. [1 ]
Ohki, T. [1 ]
Makiyama, K. [1 ]
Okamoto, N. [1 ]
Imanishi, K. [1 ]
Kikkawa, T. [1 ]
Joshin, K. [1 ]
Hara, N. [1 ]
机构：
[1] Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan
来源：
2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年
关键词：
C-band; X-band; PAE; GaN; power amplifiers;
D O I：
10.1109/MWSYM.2009.5165934
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mu m GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mu m GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GM. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.
引用
收藏
页码：1265 / +
页数：2
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