Growth of single-layer graphene on Ge (100) by chemical vapor deposition

被引：21

作者：

Mendoza, C. D. ^{[1
]}

Caldas, P. G. ^{[1
]}

Freire Jr, F. L. ^{[1
]}

Maia da Costa, M. E. H. ^{[1
]}

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22451900 Rio De Janeiro, Brazil

来源：

APPLIED SURFACE SCIENCE | 2018年 / 447卷

关键词：

Graphene; Germanium; Raman spectroscopy; STM/STS; AFM; CRYSTAL MONOLAYER GRAPHENE; COPPER FOILS; GERMANIUM; FILMS; NANORIBBONS; SURFACES; HYDROGEN;

D O I：

10.1016/j.apsusc.2018.04.019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The integration of graphene into nanoelectronic devices is dependent on the availability of direct deposition processes, which can provide uniform, large-area and high-quality graphene on semiconductor substrates such as Ge or Si. In this work, we synthesised graphene directly on p-type Ge (1 0 0) substrates by chemical vapour deposition. The influence of the CH4:H-2 flow ratio on the graphene growth was investigated. Raman Spectroscopy, Raman mapping, Scanning Electron Microscopy, Atomic Force Microscopy and Scanning Tunnelling Microscopy/Scanning Tunnelling Spectroscopy results showed that good quality and homogeneous monolayer graphene over a large area can be achieved on Ge substrates directly with optimal growth conditions. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：816 / 821

页数：6

共 37 条

[1] The CVD graphene transfer procedure introduces metallic impurities which alter the graphene electrochemical properties [J].

Ambrosi, Adriano ;

Pumera, Martin .

NANOSCALE, 2014, 6 (01) :472-476

[2]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[3] Graphene growth on metal surfaces [J].

Bartelt, N. C. ;

McCarty, K. F. .

MRS BULLETIN, 2012, 37 (12) :1158-1165

[4] Intrinsic Line Shape of the Raman 2D-Mode in Freestanding Graphene Monolayers [J].

Berciaud, Stephane ;

Li, Xianglong ;

Htoon, Han ;

Brus, Louis E. ;

Doorn, Stephen K. ;

Heinz, Tony F. .

NANO LETTERS, 2013, 13 (08) :3517-3523

[5] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[6] Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].

Bhaviripudi, Sreekar ;

Jia, Xiaoting ;

Dresselhaus, Mildred S. ;

Kong, Jing .

NANO LETTERS, 2010, 10 (10) :4128-4133

[7] Production and processing of graphene and 2d crystals [J].

Bonaccorso, Francesco ;

Lombardo, Antonio ;

Hasan, Tawfique ;

Sun, Zhipei ;

Colombo, Luigi ;

Ferrari, Andrea C. .

MATERIALS TODAY, 2012, 15 (12) :564-589

[8]

Buwen C., 2016, J SEMICOND, V37

[9]

Claeys C., 2007, Germanium-based technologies: from materials to devices

[10] Understanding the growth mechanism of graphene on Ge/Si(001) surfaces [J].

Dabrowski, J. ;

Lippert, G. ;

Avila, J. ;

Baringhaus, J. ;

Colambo, I. ;

Dedkov, Yu S. ;

Herziger, F. ;

Lupina, G. ;

Maultzsch, J. ;

Schaffus, T. ;

Schroeder, T. ;

Kot, M. ;

Tegenkamp, C. ;

Vignaud, D. ;

Asensio, M. -C. .

SCIENTIFIC REPORTS, 2016, 6

← 1 2 3 4 →