Growth of single-layer graphene on Ge (100) by chemical vapor deposition

被引：21
作者：
Mendoza, C. D. [1 ]
Caldas, P. G. [1 ]
Freire Jr, F. L. [1 ]
Maia da Costa, M. E. H. [1 ]
机构：
[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22451900 Rio De Janeiro, Brazil
来源：
APPLIED SURFACE SCIENCE | 2018年 / 447卷
关键词：
Graphene; Germanium; Raman spectroscopy; STM/STS; AFM; CRYSTAL MONOLAYER GRAPHENE; COPPER FOILS; GERMANIUM; FILMS; NANORIBBONS; SURFACES; HYDROGEN;
D O I：
10.1016/j.apsusc.2018.04.019
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The integration of graphene into nanoelectronic devices is dependent on the availability of direct deposition processes, which can provide uniform, large-area and high-quality graphene on semiconductor substrates such as Ge or Si. In this work, we synthesised graphene directly on p-type Ge (1 0 0) substrates by chemical vapour deposition. The influence of the CH4:H-2 flow ratio on the graphene growth was investigated. Raman Spectroscopy, Raman mapping, Scanning Electron Microscopy, Atomic Force Microscopy and Scanning Tunnelling Microscopy/Scanning Tunnelling Spectroscopy results showed that good quality and homogeneous monolayer graphene over a large area can be achieved on Ge substrates directly with optimal growth conditions. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：816 / 821
页数：6
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