Evaluation and Applications of 600V/650V Enhancement-Mode GaN Devices

被引：0
|
作者：
Huang, Xiucheng [1 ]
Liu, Tao [1 ]
Li, Bin [1 ]
Lee, Fred C. [1 ]
Li, Qiang [1 ]
机构：
[1] Virginia Tech, Ctr Power Elect Syst, Blacksburg, VA USA
来源：
WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS | 2015年
关键词：
Enhancement-mode; depletion-mode; Gallium Nitride; cascode; switching loss; gate drive; TRANSFORMER; HEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents elaborate evaluation of 600V/650V enhancement mode gallium nitride (GaN) devices. The switching loss mechanism and the impact of package and driving circuit parameters are illustrated in detail. The hard switching turn-on loss is dominant due to junction capacitor charge of the freewheeling switch. The turn-off loss is much smaller and it can be further improved by driving circuit parameters and packaging. The driving circuit taking consider of high dv/dt and di/dt immunity is discussed. A few design examples are shown to demonstrate the advantage of GaN and the impact of GaN on system design.
引用
收藏
页码：113 / 118
页数：6
相关论文
共 50 条
  • [1] An Improved Switching Loss Model for a 650V Enhancement-Mode GaN Transistor
    Wang, Kangping
    Tian, Mofan
    Li, Hongchang
    Zhang, Feng
    Yang, Xu
    Wang, Laili
    2016 IEEE 2ND ANNUAL SOUTHERN POWER ELECTRONICS CONFERENCE (SPEC), 2016,
  • [2] Reverse Bias Lifetime Analysis of 600V Enhancement Mode GaN Devices
    Kannan, Hari
    Veereddy, Deepak
    Wang, Zhaofeng
    Khalil, Sameh
    Charles, Alain
    Kim, Hyeongnam
    Imam, Mohamed
    2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2017, : 44 - 47
  • [3] Characterization of an Enhancement-Mode 650-V GaN HFET
    Jones, Edward A.
    Wang, Fred
    Costinett, Daniel
    Zhang, Zheyu
    Guo, Ben
    Liu, Bo
    Ren, Ren
    2015 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2015, : 400 - 407
  • [4] Characterization of 600V/650V Commercial SiC Schottky Diodes at Extremely High Temperatures
    Wang, Xuhui
    Qi, Jinwei
    Yang, Mingchao
    2019 IEEE 10TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG 2019), 2019, : 833 - 836
  • [5] Characterization of 650 V Enhancement-mode GaN HEMT at Cryogenic Temperatures
    Ren, Ren
    Gui, Handong
    Zhang, Zheyu
    Chen, Ruirui
    Niu, Jiahao
    Wang, Fred
    Tolbert, Leon M.
    Blalock, Benjamin J.
    Costinett, Daniel J.
    Choi, Benjamin B.
    2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 891 - 897
  • [6] Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications
    Posthuma, N. E.
    You, S.
    Stoffels, S.
    Liang, H.
    Zhao, M.
    Decoutere, S.
    PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 188 - 191
  • [7] dV/dt Immunity of Half Bridges Based on 650V Enhancement Mode GaN HEMTs
    Fiori, Franco
    Nuebling, Marcus
    Klotzt, Frank
    2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE, 2023,
  • [8] Comparison of 600V Si, SiC and GaN power devices
    Chowdhury, Sauvik
    Stum, Zachary
    Li, Zhongda
    Ueno, Katsunori
    Chow, T. Paul
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 971 - +
  • [9] Evaluation and Application of 600V GaN HEMT in Cascode Structure
    Huang, Xiucheng
    Liu, Zhengyang
    Li, Qiang
    Lee, Fred. C.
    2013 TWENTY-EIGHTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2013), 2013, : 1279 - 1286
  • [10] 600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
    Liu, Linlin
    Zhu, TingGang
    Murphy, Michael
    Pabisz, Marek
    Pophristic, Milan
    Peres, Boris
    Hierl, Tom
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1251 - 1256
12345