Polarization-insensitive GaN metalenses at visible wavelengths

被引:20
作者
Chen, Meng-Hsin [1 ,2 ]
Yen, Cheng-Wei [1 ,3 ]
Guo, Chia-Chun [4 ]
Su, Vin-Cent [4 ]
Kuan, Chieh-Hsiung [1 ,2 ]
Lin, Hoang Yan [1 ,2 ]
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
[4] Natl United Univ, Dept Elect Engn, Miaoli 36003, Taiwan
关键词
BAND ACHROMATIC METALENS; POWER; FABRICATION; REFLECTION; EFFICIENCY; DIODES; LEDS;
D O I
10.1038/s41598-021-94176-7
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The growth of wide-bandgap materials on patterned substrates has revolutionized the means with which we can improve the light output power of gallium nitride (GaN) light-emitting diodes (LEDs). Conventional patterned structure inspection usually relies on an expensive vacuum-system-required scanning electron microscope (SEM) or optical microscope (OM) with bulky objectives. On the other hand, ultra-thin metasurfaces have been widely used in widespread applications, especially for converging lenses. In this study, we propose newly developed, highly efficient hexagon-resonated elements (HREs) combined with gingerly selected subwavelength periods of the elements for the construction of polarization-insensitive metalenses of high performance. Also, the well-developed fabrication techniques have been employed to realize the high-aspect-ratio metalenses working at three distinct wavelengths of 405, 532, and 633 nm with respective diffraction-limited focusing efficiencies of 93%, 86%, and 92%. The 1951 United States Air Force (USAF) test chart has been chosen to characterize the imaging capability. All of the images formed by the 405-nm-designed metalens show exceptional clear line features, and the smallest resolvable features are lines with widths of 870 nm. To perform the inspection capacity for patterned substrates, for the proof of concept, a commercially available patterned sapphire substrate (PSS) for the growth of the GaN LEDs has been opted and carefully examined by the high-resolution SEM system. With the appropriately chosen metalenses at the desired wavelength, the summits of structures in the PSS can be clearly observed in the images. The PSS imaging qualities taken by the ultra-thin and light-weight metalenses with a numerical aperture (NA) of 0.3 are comparable to those seen by an objective with the NA of 0.4. This work can pioneer semiconductor manufacturing to choose the polarization-insensitive GaN metalenses to inspect the patterned structures instead of using the SEM or the bulky and heavy conventional objectives.
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页数:10
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共 45 条
[1]   Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography [J].
Byeon, Kyeong-Jae ;
Cho, Joong-Yeon ;
Kim, Jinseung ;
Park, Hyoungwon ;
Lee, Heon .
OPTICS EXPRESS, 2012, 20 (10) :11423-11432
[2]   GaN Metalens for Pixel-Level Full-Color Routing at Visible Light [J].
Chen, Bo Han ;
Wu, Pin Chieh ;
Su, Vin-Cent ;
Lai, Yi-Chieh ;
Chu, Cheng Hung ;
Lee, I. Chen ;
Chen, Jia-Wern ;
Chen, Yu Han ;
Lan, Yung-Chiang ;
Kuan, Chieh-Hsiung ;
Tsai, Din Ping .
NANO LETTERS, 2017, 17 (10) :6345-6352
[3]   Spectral tomographic imaging with aplanatic metalens [J].
Chen, Chen ;
Song, Wange ;
Chen, Jia-Wern ;
Wang, Jung-Hsi ;
Chen, Yu Han ;
Xu, Beibei ;
Chen, Mu-Ku ;
Li, Hanmeng ;
Fang, Bin ;
Chen, Ji ;
Kuo, Hsin Yu ;
Wang, Shuming ;
Tsai, Din Ping ;
Zhu, Shining ;
Li, Tao .
LIGHT-SCIENCE & APPLICATIONS, 2019, 8 (1)
[4]   Polarization-insensitive dielectric metalenses with different numerical apertures and off-axis focusing characteristics [J].
Chen, Deli ;
Wang, Junjie ;
Qi, Yongle ;
Wang, Shuaimeng ;
Xue, Qi ;
Sun, Xiaohong .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2020, 37 (12) :3588-3595
[5]   Defect reduction in GaN on dome-shaped patterned-sapphire substrates [J].
Chen, Po-Hsun ;
Su, Vin-Cent ;
Wu, Shang-Hsuan ;
Lin, Ray-Ming ;
Kuan, Chieh-Hsiung .
OPTICAL MATERIALS, 2018, 76 :368-374
[6]   Broadband Achromatic Metasurface-Refractive Optics [J].
Chen, Wei Ting ;
Zhu, Alexander Y. ;
Sisler, Jared ;
Huang, Yao-Wei ;
Yousef, Kerolos M. A. ;
Lee, Eric ;
Qiu, Cheng-Wei ;
Capasso, Federico .
NANO LETTERS, 2018, 18 (12) :7801-7808
[7]   A broadband achromatic metalens for focusing and imaging in the visible [J].
Chen, Wei Ting ;
Zhu, Alexander Y. ;
Sanjeev, Vyshakh ;
Khorasaninejad, Mohammadreza ;
Shi, Zhujun ;
Lee, Eric ;
Capasso, Federico .
NATURE NANOTECHNOLOGY, 2018, 13 (03) :220-+
[8]   450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM [J].
Chi, Yu-Chieh ;
Hsieh, Dan-Hua ;
Tsai, Cheng-Ting ;
Chen, Hsiang-Yu ;
Kuo, Hao-Chung ;
Lin, Gong-Ru .
OPTICS EXPRESS, 2015, 23 (10) :13051-13059
[9]   Imaging Performance of Polarization-Insensitive Metalenses [J].
Decker, Manuel ;
Chen, Wei Ting ;
Nobis, Thomas ;
Zhu, Alexander Y. ;
Khorasaninejad, Mohammadreza ;
Bharwani, Zameer ;
Capasso, Federico ;
Petschulat, Joerg .
ACS PHOTONICS, 2019, 6 (06) :1493-1499
[10]   A high numerical aperture, polarization-insensitive metalens for long-wavelength infrared imaging [J].
Fan, Qingbin ;
Liu, Mingze ;
Yang, Cheng ;
Yu, Le ;
Yan, Feng ;
Xu, Ting .
APPLIED PHYSICS LETTERS, 2018, 113 (20)