Dielectric properties and model of hopping conductivity of GaAs irradiated by H+ ions

被引：36
作者：
Zukowski, P.
Koltunowicz, T.
Partyka, J.
Wegierek, P.
Komarov, F. F.
Mironov, A. M.
Butkievith, N.
Freik, D.
机构：
[1] Tech Univ Lublin, PL-20618 Lublin, Poland
[2] Belarusian State Univ, Minsk 220050, BELARUS
[3] Belarusian State Pedagog Univ, Minsk, BELARUS
[4] Vasyl Stefanyk Precarpathian Univ, Ivano Frankivsk, Ukraine
来源：
VACUUM | 2007年 / 81卷 / 10期
关键词：
ion implantation; hopping conductivity; gallium arsenide;
D O I：
10.1016/j.vacuum.2007.01.070
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Experimental results on frequency and temperature dependences of conductivity of GaAs layers compensated by polyenergetic H+ implantation are presented. A model of hopping conductivity related to amphoteric defects is proposed. (c) 2007 Published by Elsevier Ltd.
引用
收藏
页码：1137 / 1140
页数：4
相关论文
共 5 条
[1]  
Komarov FF, 1999, NUKLEONIKA, V44, P201
[2]   Formation of device isolation in GaAs with polyenergetic ion implantation [J].
Komarov, FF ;
Kamyshan, AS ;
Mironov, AM ;
Lagutin, AE ;
Martynov, IS .
VACUUM, 2001, 63 (04) :577-579
[3]   Frequency-dependent annealing characteristics of the implant-isolated GaAs layers [J].
Kowalski, M ;
Partyka, J ;
Wegierek, P ;
Zukowski, P ;
Komarov, FF ;
Jurchenko, AV ;
Freik, D .
VACUUM, 2005, 78 (2-4) :311-317
[4]  
MOTT NF, 1979, ELECT PROCESS NON CR
[5]   Dielectric properties of implanted silicon layers: Influence of rapid thermal annealing [J].
Partyka, J ;
Wegierek, P ;
Zukowski, P ;
Sidorenko, Y ;
Szostak, Y .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 197 (1-2) :60-66
1