Record-Low Inhomogeneous Broadening of Site-Controlled Quantum Dots for Nanophotonics

被引：73

作者：

Mohan, Arun ^{[1
]}

Gallo, Pascal ^{[1
]}

Felici, Marco ^{[1
]}

Dwir, Benjamin ^{[1
]}

Rudra, Alok ^{[1
]}

Faist, Jerome ^{[2
]}

Kapon, Eli ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

[2] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Lausanne, Switzerland

来源：

SMALL | 2010年 / 6卷 / 12期

关键词：

epitaxy; nanotechnology; photonics; quantum dots; self-assembly; ARRAYS;

D O I：

10.1002/smll.201000341

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Large arrays of dense, site-controlled InGaAs/GaAs quantum dots (QDs) are grown by organometallic chemical vapor deposition in an ordered pattern of tetrahedral recesses (pyramids). These QDs exhibit a low inhomogeneous broadening (≈1 meV), large s-p separation (>50 meV), and efficient single-photon emission. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1268 / 1272

页数：5

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