InAs-based quantum cascade light emitting structures containing a double plasmon waveguide

被引：6

作者：

Ohtani, K ^{[1
]}

Sakuma, H ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Lab Elect Intelligent Syst, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

molecular beam epitaxy; antimonides; heterojunction semiconductor devices; light emitting diodes;

D O I：

10.1016/S0022-0248(02)02314-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxy and electroluminescence properties of InAs-based quantum cascade light emitting structure containing an InAs double plasmon waveguide are reported. Samples are prepared using low group-V flux and controlled interface bonds during molecular beam epitaxy resulting in high structural and optical qualities. Electroluminescence measurements indicate that it is necessary to reduce the operating electric fields to avoid band-to-band tunneling in narrow gap semiconductor cascade devices. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：718 / 722

页数：5

共 16 条

[1] Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures [J].