Electrical properties of ZnO nanowire-field effect transistors characterized with scanning probes

被引:124
作者
Fan, ZY
Lu, JG [1 ]
机构
[1] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA
[2] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1851621
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single ZnO nanowires are configured as field effect transistors and their electrical properties are characterized using scanning probe microscopy (SPM). Scanning surface potential microscopy is used to map the electric potential distribution on the nanowire. Potential drop along the nanowire and at the contacts are resolved, and contact resistances are estimated. Furthermore, conductive SPM tip is used as a local gate to manipulate the electrical property. The local change of electron density induced by a negatively biased tip significantly affects the current transport through the nanowire. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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