Development of novel ultra-high dielectric constant polymer based composite

被引:0
作者
Rao, Y [1 ]
Wong, CP [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Package Res Ctr, Atlanta, GA 30332 USA
来源
PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM ON ELECTRONIC MATERIALS AND PACKAGING | 2002年
关键词
D O I
10.1109/EMAP.2002.1188861
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Embedded capacitor technology can increase silicon packing efficiency, improve electrical performance, and reduce electronic assembly cost compared with traditional discrete capacitor technology. Developing a suitable material that satisfies electrical, reliability and processing requirements is one of the major challenges of incorporating capacitors into a printed wiring board (PWB) substrate for demanding wireless, RF portable telecommunication products. A novel epoxy-based composite with very ultra high dielectric constant (epsilon(r)similar to1000) has been developed in this work. The previous record of epsilon(r) = 150 was only recently reported. To our best knowledge, this is the highest K value of the polymer based composite ever reported. High dielectric constant is obtained by increasing the concentration of conductive filler close to but not exceed the percolation threshold within the polymer matrix. This novel ultra high K material also has low dielectric loss (< 0.02), good adhesion and perfect multi-chip-module laminate (MCM-L) process compatibility. An embedded capacitor prototype with capacitance density of 100 nF/cm(2) has been manufactured using this composite and spin coating technology. This novel composite is the perfect material candidate for the integral embedded capacitor applications for next generation electronic products.
引用
收藏
页码:335 / 340
页数:6
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