Observation of 3-fold periodicity in 3C-SiC layers grown by MBE

被引：5

作者：

Kaiser, U

Brown, PD

Chuvilin, A

Khodos, I

Fissel, A

Richter, W

Preston, A

Humphreys, CJ

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[3] Russian Acad Sci, Inst Catalysis, Novosibirsk 630090, Russia

[4] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

molecular beam epitaxy; homoepitaxy; RHEED;

D O I：

10.4028/www.scientific.net/MSF.264-268.259

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution transmission electron microscopy images of 3C-SiC layers grown on SiC (0001) substrates by solid-source MBE at different growth conditions often reveal regions of material exhibiting an unusual 3 fold periodicity. Such regions always seem to be associated with twins and stacking faults within the layer. We consider two different models which can match this 3-fold periodicity.

引用

页码：259 / 262

页数：4

共 8 条

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Baumhauer Heinrich., 1912, Zeitschrift fur Kristallographie-Crystalline Materials, V50, P33, DOI DOI 10.1524/ZKRI.1912.50.1.33

[2]

DETENTENEER PJH, 1989, MATER RES SOC S P, V141, P343

[3] Growth of 6H-SiC on 6H-SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures [J].