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Electrodeposited CuInSe2 counter electrodes for efficient and stable quantum dot-sensitized solar cells
被引:15
作者:
Guo, Huier
[1
]
Zhou, Ru
[2
]
Huang, Yuanzhang
[2
]
Wan, Lei
[2
]
Gan, Wei
[3
]
Niu, Haihong
[2
]
Xu, Jinzhang
[2
]
机构:
[1] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
[2] Hefei Univ Technol, Sch Elect Engn & Automat, Hefei 230009, Anhui, Peoples R China
[3] West Anhui Univ, Analyt & Testing Ctr, Luan 237015, Peoples R China
基金:
中国国家自然科学基金;
中国博士后科学基金;
关键词:
Quantum dot-sensitized solar cell;
Counter electrode;
CuInSe2;
Catalysis;
Stability;
IONIC LAYER ADSORPTION;
THIN-FILMS;
PERFORMANCE;
PBS;
MICROSPHERES;
DEPOSITION;
NANOSHEETS;
EVOLUTION;
GROWTH;
D O I:
10.1016/j.ceramint.2018.05.228
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this work, we report an electrodeposition technique for fabricating chalcopyrite phase CuInSe2 (CISe) thin films and demonstrate the great prospect of CISe films for serving as efficient counter electrodes (CEs) in quantum dot sensitized solar cells (QDSCs). The as-prepared CISe materials, directly deposited onto conducting substrates, display long-range uniformity with high crystallinity and nanopillar shapes. A CISe CE-based CdS/CdSe QDSC delivers a considerable power conversion efficiency of 2.92%, coupled with excellent device stability. In contrast to the conventional noble Pt electrodes, CISe CEs exhibit much higher catalytic activity for electrocatalysing polysulfide electrolyte regeneration. This work offers a promising CE with superior catalytic capability for constructing highly efficient and stable QDSCs.
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页码:16092 / 16098
页数:7
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