Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2

Metal-induced low-temperature (less than or equal to550 degreesC) crystallization of amorphous-Si1-xGex (0less than or equal toxless than or equal to1) on SiO2 has been investigated. In the case of low Ge fraction (0less than or equal toxless than or equal to0.2), Ge-doping enhanced plane growth was observed. This achieved strain-free poly-Si0.8Ge0.2 with large grains (18 mum). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (0.4less than or equal toxless than or equal to0.6). By optimizing the growth conditions (x: 0.4, annealing: 450 degreesC, 20 h), very sharp needle-like crystal regions (width: 0.05 mum, length: 10 mum) were obtained. These polycrystalline SiGe films on SiO2 should be used for the system-in-display, three-dimensional ultralarge scale integrated circuits, and novel one-dimensional wires. (C) 2003 American Institute of Physics.