Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7Ca0.3MnO3/Pt Devices

被引：27

作者：

Gang Jian-Lei ^{[1
,2
]}

Li Song-Lin ^{[1
]}

Liao Zhao-Liang ^{[1
]}

Meng Yang ^{[1
]}

Liang Xue-Jin ^{[1
]}

Chen Dong-Min ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] China Acad Railway Sci, Signal & Commun Res Inst, Beijing 100081, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 02期

基金：

中国国家自然科学基金;

关键词：

FILMS;

D O I：

10.1088/0256-307X/27/2/027301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I - V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply based on whether the Gibbs free energy of oxidation for the metal tip is lower or higher than that of PCMO, respectively. While the clockwise hysteresis can be attributed to electric field induced oxidation/reduction, the counter clockwise hysteresis can be explained by oxygen vacancy migration in an electrical field. Alternating-current conductance spectra also reveal distinct hopping barriers between these two categories of devices at high resistive states.

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页数：4

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