Simulation study of InGaN intermediate-band solar cells

被引：0

作者：

Chen, Kuo-Feng ^{[1
]}

Hung, Chien-Lun ^{[1
]}

Tsai, Yao-Lung ^{[1
]}

机构：

[1] Natl Kaohsiung Univ Appl Sci, Inst Photon & Commun, 415 Jiangong Rd, Kaohsiung 807, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2016年 / 49卷 / 48期

关键词：

InGaN solar cells; intermediate band; photon flux; simulation; EFFICIENCY; IN1-XGAXN; GAP; INN;

D O I：

10.1088/0022-3727/49/48/485102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performances of single-junction InGaN solar cells with various intermediate bands (IBs) have been simulated using the lifetime model of a 1D simulation program called Analysis of Microelectronic and Photonic Structures (AMPS-1D). It has been observed that the maximum efficiencies of the InGaN solar cells with one, two and three intermediate bands are 47.72%, 55.10% and 58.20%, respectively, which outperform the 25.96% efficiency of the conventional single-junction structure by far. This is primarily attributed to the outstanding capability of the light harvesting from the sub-bandgap absorption. At the optimized bandgap of 2.41 eV, two-IB InGaN solar cells with the IB positions located at 0.95-1.1 eV and 0.3-0.75 eV, respectively, may have an opportunity to realize over 50% efficiency.

引用

页数：6

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