K-band capacitive MEMS-switches

被引：7

作者：

Ulm, M ^{[1
]}

Walter, T ^{[1
]}

Mueller-Fiedler, R ^{[1
]}

Voigtlaender, K ^{[1
]}

Kasper, E ^{[1
]}

机构：

[1] Robert Bosch GmbH, Corp Res & Dev, Microsyst Technol, D-70839 Gerlingen, Germany

来源：

2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/SMIC.2000.844313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper single-pole single-throw It-Band microelectromechanical capacitive switches are discussed, exhibiting Low insertion losses (< 0.3 dB @ 21 GHz) and good isolation (34 dB @ 21 GHz). Depending on the respective geometry, an electromechanical characterization yields actuation voltages from 16 to 33 V and switching times around 10 mu s. Furthermore resonance frequencies above 50 kHz have been measured. The switches are integrated in coplanar transmission lines on high resistivity silicon substrates. In order to be compatible with present semiconductor device technology, the fabrication process mainly employs copper and aluminum metallisations.

引用

页码：119 / 122

页数：4