Behaviour of manganese in InP compared with other impurities of 3d transition metals

A series of InP single crystals doped with Mn, Fe, Ti and Ni with two levels of doping, (i) larger (heavy doping); and (ii) smaller (light doping) than the background doping were grown using the Czochralski technique. The crystals were studied by infrared absorption spectroscopy at liquid helium temperatures and by temperature dependent Hall measurements. Absorption spectra indicate a special electron configuration of Mn bound with a shallow hole and on regular partly occupied 3d shells of Fe and Ti. Binding energies of Mn, Fe and Ti were determined by temperature dependent Hall measurements on the first type of sample. Electron mobility of the second type of sample shows a large decline at low temperatures in the cases of Fe, Ti and Ni doping in comparison with the undoped samples. No such difference was observed in the case of Mn doping. The reduction of mobility demonstrates large electron scattering on transition metal ions with partly occupied d-shells.