Fast Photothermoelectric Response in CVD-Grown PdSe2 Photodetectors with In-Plane Anisotropy

被引：93

作者：

Li, Gang ^{[1
]}

Yin, Shiqi ^{[1
]}

Tan, Chaoyang ^{[1
]}

Chen, Lijie ^{[1
]}

Yu, Mengxi ^{[1
]}

Li, Liang ^{[1
,2
]}

Yan, Feng ^{[3
]}

机构：

[1] Anhui Univ, Informat Mat & Intelligent Sensing Lab Anhui Prov, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China

[2] Anhui Univ, Photoelect Convers Energy Mat & Devices Key Lab A, Hefei 230601, Peoples R China

[3] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong 999077, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2021年 / 31卷 / 40期

基金：

中国国家自然科学基金;

关键词：

air-stable PdSe; (2); anisotropic response; fast response; photothermoelectric; HETEROJUNCTION;

D O I：

10.1002/adfm.202104787

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

PdSe2, a star photosensitive functional material, has been successfully used in photodetectors based on sensing mechanisms of photogating, photoconductive, and photovoltaic effects. Here, a photothermoelectric (PTE) effect is observed in photodetectors based on PdSe2 flakes grown by chemical vapor deposition. The unique photoresponse arises from an electron temperature gradient instead of electron-hole separation. Direct evidence of the PTE effect is confirmed by a nonlocal photoresponse under zero bias. Moreover, the PdSe2 photodetector shows high performance in terms of ultrafast response speed (4 mu s), high air-stability, broadband spectrum photodetection, reasonable responsivity, and anisotropic optical response. This study paves a new way for developing high-performance photodetectors based on PdSe2 layered materials.

引用

页数：7

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