Effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors

被引:43
作者
Lee, S [1 ]
Chung, SJ
Choi, IS
Yuldeshev, SU
Im, H
Kang, TW
Lim, WL
Sasaki, Y
Liu, X
Wojtowicz, T
Furdyna, JK
机构
[1] Korea Univ, Dept Phys, Seoul 136701, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
关键词
D O I
10.1063/1.1556272
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied two series of molecular beam epitaxy grown Ga1-xMnxAs epilayers with several different Be doping levels. Two Mn concentrations x were chosen for this study: 0.03 and 0.05, and these values were maintained constant in each series. These samples were characterized by using SQUID and magnetotransport measurements. A systematic increase of the Curie temperature T-C was observed in SQUID measurements on the series of Ga1-xMnxAs with x=0.03. The resistivity measured at zero magnetic field shows a local maximum near the Curie temperature, reflecting the effects of critical scattering near T-C. The observed increase of T-C in Ga1-xMnxAs for this low range of x can be explained by the increase of the free carrier concentrations in the system arising from Be doping. However, in the series of Ga1-xMnxAs with the higher concentration of Mn (x=0.05), the measurements reveal that the T-C systematically decreases with increasing Be doping level. We discuss this effect in terms of a fundamental limitation of the carrier concentration that can be thermodynamically accommodated by Ga1-xMnxAs epilayers. (C) 2003 American Institute of Physics.
引用
收藏
页码:8307 / 8309
页数:3
相关论文
共 13 条
[1]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[2]   Atomic-scale study of GaMnAs/GaAs layers [J].
Grandidier, B ;
Nys, JP ;
Delerue, C ;
Stiévenard, D ;
Higo, Y ;
Tanaka, M .
APPLIED PHYSICS LETTERS, 2000, 77 (24) :4001-4003
[3]   Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As [J].
Hayashi, T ;
Hashimoto, Y ;
Katsumoto, S ;
Iye, Y .
APPLIED PHYSICS LETTERS, 2001, 78 (12) :1691-1693
[4]   Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].
Matsukura, F ;
Ohno, H ;
Shen, A ;
Sugawara, Y .
PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040
[5]   Magnetoimpurity theory of resistivity and magnetoresistance for degenerate ferromagnetic semiconductors of the LaMnO3 type [J].
Nagaev, EL .
PHYSICAL REVIEW B, 1996, 54 (23) :16608-16617
[6]   Properties of ferromagnetic III-V semiconductors [J].
Ohno, H .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :110-129
[7]   Making nonmagnetic semiconductors ferromagnetic [J].
Ohno, H .
SCIENCE, 1998, 281 (5379) :951-956
[8]   Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C [J].
Specht, P ;
Lutz, RC ;
Zhao, R ;
Weber, ER ;
Liu, WK ;
Bacher, K ;
Towner, FJ ;
Stewart, TR ;
Luysberg, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1200-1204
[9]   Magnetic interactions with charge carriers in III-V diluted magnetic semiconductors [J].
Van Bockstal, L ;
Van Esch, A ;
Bogaerts, R ;
Herlach, F ;
van Steenbergen, A ;
De Boeck, J ;
Borghs, G .
PHYSICA B, 1998, 246 :258-261
[10]   AMPHOTERIC NATIVE DEFECTS IN SEMICONDUCTORS [J].
WALUKIEWICZ, W .
APPLIED PHYSICS LETTERS, 1989, 54 (21) :2094-2096