Improved epitaxy of cubic SiC thin films on Si(111) by solid-source MBE

被引：16
作者：
Fissel, A
Pfennighaus, K
Kaiser, U
Krausslich, J
Hobert, H
Schroter, B
Richter, W
机构：
[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany
[2] Univ Jena, Inst Opt & Quantenelekt, D-07743 Jena, Germany
[3] Univ Jena, Inst Chem Phys, D-07743 Jena, Germany
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
heteroepitaxy; MBE; Raman; XRD; IR; LEED; RHEED; TEM;
D O I：
10.4028/www.scientific.net/MSF.264-268.255
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin epitaxial SiC films were grown on Si(111) by solid-source MBE at a substrate temperature of 1000 degrees C and at growth rates in the range of 1 nm/min. An improved SiC film growth has been realized by a several step procedure including a careful preparation of the Si(111)-(7x7) surface, a low temperature deposition of carbon without SiC formation, a short annealing step and, a step decrease of supersaturation during the SIC deposition. The films investigated by RHEED, LEED, TEM, XRD, electron channeling and Raman-and IR-spectroscopy were found to be of good crystalline quality ( FWHM omega-scan: 0.5 degrees) with a low twin density ( average distance 50 mu m).
引用
收藏
页码：255 / 258
页数：4
相关论文
共 16 条
[1]   RAMAN-SCATTERING STUDIES OF CHEMICAL-VAPOR-DEPOSITED CUBIC SIC FILMS OF (100) SI [J].
FENG, ZC ;
MASCARENHAS, AJ ;
CHOYKE, WJ ;
POWELL, JA .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :3176-3186
[2]   LOW-TEMPERATURE GROWTH OF SIC THIN-FILMS ON SI AND 6H-SIC BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY [J].
FISSEL, A ;
SCHROTER, B ;
RICHTER, W .
APPLIED PHYSICS LETTERS, 1995, 66 (23) :3182-3184
[3]  
HOBERT H, IN PRESS J NONCRYST
[4]   THE GROWTH OF SINGLE-CRYSTAL OF 3C-SIC ON THE SI SUBSTRATE BY THE MBE METHOD USING MULTI ELECTRON-BEAM HEATING [J].
KANEDA, S ;
SAKAMOTO, Y ;
NISHI, C ;
KANAYA, M ;
HANNAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09) :1307-1311
[5]   SIMULATIONS AND EXPERIMENTS OF SIC HETEROEPITAXIAL GROWTH ON SI(001) SURFACE [J].
KITABATAKE, M ;
DEGUCHI, M ;
HIRAO, T .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) :4438-4445
[6]   EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J].
KONG, HS ;
GLASS, JT ;
DAVIS, RF .
APPLIED PHYSICS LETTERS, 1986, 49 (17) :1074-1076
[7]   GROWTH OF 3C-SIC ON ON-AXIS SI(100) SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION [J].
KORDINA, O ;
BJORKETUN, LO ;
HENRY, A ;
HALLIN, C ;
GLASS, RC ;
HULTMAN, L ;
SUNDGREN, JE ;
JANZEN, E .
JOURNAL OF CRYSTAL GROWTH, 1995, 154 (3-4) :303-314
[8]   X-RAY, TRANSMISSION ELECTRON-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY CHARACTERIZATION OF SIC THIN-FILMS ON SI(111) [J].
KRAUSSLICH, J ;
FISSEL, A ;
KAISER, U ;
GOETZ, K ;
DRESSLER, L .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (04) :759-763
[9]  
NIKITINA IP, 1994, I PHYS C SER, V137, P345
[10]   EPITAXIAL-GROWTH AND ELECTRIC CHARACTERISTICS OF CUBIC SIC ON SILICON [J].
NISHINO, S ;
SUHARA, H ;
ONO, H ;
MATSUNAMI, H .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4889-4893
12