Experimental demonstration of resonant spin-orbit interaction effect

被引：0

作者：

Kunihashi, Yoji ^{[1
]}

Kohda, Makoto ^{[1
]}

Nitta, Junsaku ^{[1
]}

机构：

[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 980, Japan

来源：

PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMS | 2010年 / 3卷 / 02期

基金：

日本学术振兴会;

关键词：

Quantum wire; Spin-orbit interaction; weak antilocalization; WEAK-LOCALIZATION;

D O I：

10.1016/j.phpro.2010.01.173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the spin lifetime in gate-fitted InGaAs narrow wires by magnetotransport measurement. By applying positive gate bias voltage, the spin lifetime in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. By comparison with a theoretical model of the quasi one-dimensional transport, it is found that this enhancement of spin lifetime in gated wires is due to dimensional confinement and resonant spin-orbit interaction effect by gate bias modulation of the Rashba spin-orbit interaction. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.

引用

页码：1261 / 1266

页数：6

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