Activation behavior of boron implanted poly-Si on glass substrate

被引：3

作者：

Furuta, M. ^{[1
]}

Shimamura, K. ^{[2
]}

Tsubokawa, H. ^{[2
]}

Tokushige, K. ^{[2
]}

Furuta, H. ^{[1
]}

Hirao, T. ^{[1
]}

机构：

[1] Kochi Univ Technol, Res Inst Nanodevices, Kochi 7828502, Japan

[2] Mitsui Engn & Shipbldg Co Ltd, Okayama 7060014, Japan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 15期

关键词：

Poly-Si; Ion implantation; Boron; Annealing; Hall effect; Raman spectroscopy; POLYCRYSTALLINE SILICON;

D O I：

10.1016/j.tsf.2010.02.060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The activation behavior of boron (B) implanted poly-Si films on glass substrates has been investigated. The effect of B dose and annealing temperature on crystal defects and electrical properties of the films were evaluated by Raman spectroscopy and Hall measurement. It was found that the maximum activation ratio of the film with B dose of 1 x 10(15) cm(-2) was obtained when Raman peak associated with disordered amorphous silicon disappeared. However, reverse anneal was observed in the film when the annealing temperature further increased. The results from secondary ion mass spectrometry and Hall measurement revealed that B segregation at the top and bottom interface and deactivation of B substitutional occurred simultaneously in the high-dose specimens when the annealing temperature increased from 600 to 750 degrees C. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4477 / 4481

页数：5

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