Reliability of power electronic devices against cosmic radiation-induced failure

被引：26
作者：
Soelkner, G
Kaindl, W
Schulze, HJ
Wachutka, G
机构：
[1] Infineon Technol Automot & Ind, D-81730 Munich, Germany
[2] Tech Univ Munich, Inst Phys Electrotechnol, D-80290 Munich, Germany
来源：
MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2004.07.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cosmic radiation has been identified as a decisive factor for power device reliability. Energetic neutrons create ionizing recoils within the semiconductor substrate which may lead to device burnout. Originally, this failure mechanism was attributed to high voltage devices only. However, the results of accelerated nucleon radiation tests made it clear that cosmic radiation-induced breakdown can no longer be disregarded for the design of power devices of voltages classes as low as 500V. Extensive device simulations supported by ion irradiation experiments gave quantitative results and may in the future allow for a predictive assessment of the cosmic radiation hardness of a specific device design. (C) 2004 Elsevier Ltd. All rights reserved.
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收藏
页码：1399 / 1406
页数：8
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