Analysis of structural, optical and electrical properties of nano-particulate indium doped zinc oxide thin films

被引:18
作者
Sahoo, Bijayalaxmi [1 ]
Behera, Debadhyan [1 ]
Pradhan, Siddhartha K. [2 ]
Mishra, Dilip Kumar [3 ]
Sahoo, Susanta Kumar [4 ]
Nayak, Rati Ranjan [5 ]
Sekhar, Kanaparedu P. C. [5 ]
机构
[1] Ravenshaw Univ, Dept Phys, Cuttack 753003, Orissa, India
[2] CSIR Inst Minerals & Mat Technol, Bhubaneswar 751013, Orissa, India
[3] Siksha O Anusandhan Deemed Be Univ, Dept Phys, Fac Engn & Technol ITER, Bhubaneswar 751030, India
[4] Royal Coll Sci & Technol, Dept Phys, Bhubaneswar 751010, India
[5] Indian Inst Chem Technol, CSIR, Hyderabad 500007, Andhra Pradesh, India
关键词
indium doped zinc oxide; spray pyrolysis; electrical properties; optical properties; SUBSTRATE-TEMPERATURE; ZNO NANOCLUSTERS; RECENT PROGRESS; SPRAY; GAS; PERFORMANCE; NANOPARTICLES; LUMINESCENCE; DEPOSITION; ETHANOL;
D O I
10.1088/2053-1591/ab4cbd
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium doped ZnO thin films were deposited on glass substrates by spray pyrolysis technique with variation of indium concentration within a range of 0-5 at% and annealed at 500 degrees C for 2 h in presence of air. Preferentially oriented ZnO films along (002) plane has been obtained at 1 at% indium doping concentration. The particle size is found to be decreased with increase in dopant concentration as a result of lowering of cohesion in ZnO. The 5 at% indium doped ZnO film has a better compact morphology due to better grain boundary interactions for which it shows highest hall mobility in comparison to the all concentration of indium doped samples. The marginal band gap shift with In doping is attributed to Burstein-Moss shift. Highest thermal activation energy of 0.78 eV has been observed in case of 3 at% indium doping. The origin of the observed visible emission peaks at 450 nm, 468 nm, 480 nm, 490 nm and 670 nm are ascribed to various defects present within the bandgap.
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页数:13
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