Advanced mask inspection optical system (AMOS) using 198.5nm wavelength for 65nm (hp) node and beyond - System development and initial state D/D inspection performance

被引：9

作者：

Tojo, T ^{[1
]}

Hirano, R ^{[1
]}

Tsuchiya, H ^{[1
]}

Oaki, J ^{[1
]}

Nishizaka, T ^{[1
]}

Sanada, Y ^{[1
]}

Matsuki, K ^{[1
]}

Isomura, I ^{[1
]}

Ogawa, R ^{[1
]}

Kobayashi, N ^{[1
]}

Nakashima, K ^{[1
]}

Sugihara, S ^{[1
]}

Inoue, H ^{[1
]}

Imai, S ^{[1
]}

Suzuki, H ^{[1
]}

Sekine, A ^{[1
]}

Taya, M ^{[1
]}

Miwa, A ^{[1
]}

Yoshioka, N ^{[1
]}

Ohira, K ^{[1
]}

Chung, DH ^{[1
]}

Otaki, M ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

来源：

24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2 | 2004年 / 5567卷

关键词：

198.5nm wavelength; defect; mask; optics; die-to-die inspection; defect detection sensitivity;

D O I：

10.1117/12.579133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical system and its performance are reported. The system is operated at wavelength of 198.5nm, which wavelength is nearly equal to 193nm-ArF laser exposure tool. Some defect image data and defect inspection sensitivity due to simulation-base die-to-die (D/D) inspection are shown on standard programmed defect test mask. As an initial state D/D inspection performance, 20-60 nm defects are certified. System capabilities for 65nm node inspection and beyond are also discussed.

引用

页码：1011 / 1023

页数：13

共 12 条

[1]

ALLES D, 2000, P SOC PHOTO-OPT INS, V4066, P426

[2]

CHUNG DH, 2004, PHOT JAP 2004 YOK AP, P75

[3]

IMAI S, 2002, ADV SOLID STATE PHOT, V84, P380

[4]

INOUE H, 2003, IPW17

[5] Required performances of reticle inspection system for ArF lithography: Through analysis of defect printability study [J].

Kim, BG ;

Tanaka, K ;

Yoshioka, N ;

Takayama, N ;

Hatta, K ;

Murakami, S ;

Otaki, M .

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX, 2002, 4754 :517-525

[6]

KIM BG, 2003, P SOC PHOTO-OPT INS, V5130, P447

[7]

OGAWA R, 2003, P SOC PHOTO-OPT INS, V5256, P65972

[8] Newly developed mask inspection system with DUV laser illumination [J].

Oohashi, K ;

Inoue, H ;

Nomura, T ;

Ono, A ;

Tabata, M ;

Suzuki, H .

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VII, 2000, 4066 :452-461

[9] A new die-to-database mask inspection system with i-line optics for 256 Mbit and 1 Gbit DRAMs [J].

Tabata, M ;

Yamashita, K ;

Tsuchiya, H ;

Nomura, T ;

Inoue, H ;

Watanabe, T ;

Tojo, T ;

Yoshino, H .

PHOTOMASK AND X-RAY MASK TECHNOLOGY IV, 1997, 3096 :415-422

[10] High resolution DUV inspection system for 150nm generation masks [J].

Tabata, M ;

Tsuchiya, H ;

Sanada, Y ;

Nishizaka, T ;

Hirazawa, H ;

Kobayashi, N ;

Nagai, H ;

Watanabe, T ;

Oohashi, K ;

Inoue, H ;

Nomura, T ;

Ono, A .

19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 :138-146

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