In-situ scanning electron microscopy of surface roughening processes in GaAs molecular beam epitaxy

被引：0
作者：
Tanahashi, K
Kawamura, Y
Inoue, N
Homma, Y
Osaka, J
机构：
[1] Univ Osaka Prefecture, Sakai, Osaka 599, Japan
[2] NTT, Sci & Core Technol Labs, Musashino, Tokyo 180, Japan
[3] NTT, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997 | 1998年 / 160卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Surface roughening processes in the molecular beam epitaxy growth of GaAs is studied by in-situ scanning electron microscopy. Three types of onset of three dimensional growth are observed, pure 3D growth, coexistence of 3D and 2D growths, and 2D to 3D transition.
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页码：67 / 70
页数：4
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