The field stop IGBT (FS ICBT) -: A new power device concept with a great improvement potential

被引：126

作者：

Laska, T ^{[1
]}

Münzer, M ^{[1
]}

Pfirsch, F ^{[1
]}

Schaeffer, C ^{[1
]}

Schmidt, T ^{[1
]}

机构：

[1] Infineon Technol, D-81541 Munich, Germany

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856842

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By a vertical shrink of the NPT IGBT to a structure with a thin n(-) base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the combination of the field stop concept with a trench transistor cell results in the almost ideal carrier concentration for a device with minimum on state voltage and lowest switching losses.

引用

页码：355 / 358

页数：4

共 10 条

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