Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering

被引：2

作者：

Chen, Zhaoying ^{[1
]}

Sui, Jingyang ^{[1
]}

Wang, Xinqiang ^{[1
,2
]}

Kim, Kumsong ^{[1
]}

Wang, Ding ^{[1
]}

Wang, Ping ^{[1
]}

Wang, Tao ^{[1
]}

Rong, Xin ^{[1
]}

Harima, Hiroshi ^{[3
]}

Yoshikawa, Akihiko ^{[4
]}

Ge, Weikun ^{[1
]}

Shen, Bo ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[3] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

[4] Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, 1-33 Yayoi Cho, Chiba 2638522, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 120卷

基金：

中国国家自然科学基金;

关键词：

Mg-doped InN; Molecular beam epitaxy; Raman scattering; Local vibrational modes; MOLECULAR-BEAM EPITAXY; FUNDAMENTAL-BAND GAP; IN-POLAR INN; ABSORPTION; GROWTH; ENERGY; FILMS;

D O I：

10.1016/j.spmi.2018.06.026

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 x 10(16) to 4 x 10(21) cm(-3). Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mg-i and Mg-In-N-In-i are the dominant sites of Mg dopants at [Mg] < 1.8 x 10(20) cm(-3), while the complex of Mg-In-N-Mg-i dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.

引用

页码：533 / 539

页数：7

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