Improvement of electron injection in inverted bottom-emission blue phosphorescent organic light emitting diodes using zinc oxide nanoparticles

被引：79

作者：

Lee, Hyunkoo ^{[1
]}

Park, Insun ^{[2
]}

Kwak, Jeonghun ^{[1
]}

Yoon, Do Y. ^{[2
]}

Lee, Changhee ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[2] Seoul Natl Univ, Dept Chem, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

关键词：

doping; II-VI semiconductors; nanoparticles; organic compounds; organic light emitting diodes; phosphorescence; transparency; wide band gap semiconductors; work function; zinc compounds; THIN-FILM TRANSISTORS; ZNO; DISPLAYS; CIRCUITS; DEVICES; LAYER;

D O I：

10.1063/1.3400224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated highly efficient iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-N,C2(')] picolinate doped inverted bottom-emission blue phosphorescent organic light-emitting diodes, with an electron injection layer of zinc oxide (ZnO) nanoparticles (NPs). The ZnO NPs layer lowers the turn-on voltage by about 4 V and significantly enhances the efficiency. The device with ZnO NPs shows peak efficiencies of 16.5 cd/A and 8.2%, about three times higher than those of the device without ZnO NPs. Since the ZnO NPs layer has a wide band gap, good electron transporting properties and low work function, it can be utilized as an effective electron injection layer with good transparency.

引用

页数：3

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