Effect of temperature on various properties of photoelectrochemical cell

被引：3

作者：

Hankare, P. P. ^{[2
]}

Chate, P. A. ^{[1
]}

Sathe, D. J. ^{[2
]}

Jadhav, B. V. ^{[2
]}

机构：

[1] JSM Coll, Dept Chem, Alibag 402201, India

[2] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 490卷 / 1-2期

关键词：

Chalcogenides; Interfaces; Semiconductor; Chemical synthesis; ZNSE THIN-FILMS; DEPOSITION; CDSE; SURFACE;

D O I：

10.1016/j.jallcom.2009.09.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zinc sulphide photoelectrode have been synthesized by dip method. Zinc sulphide acts as photoanode in photoelectrochemical cells. The photoanode annealed up to 473 K. The configuration of fabricated cell is n-ZnS|NaOH (1 M)+ S (1 M)+ Na2S (1 M)|C-(graphite). The various performance parameters were examined with respect to annealed temperature. It is found that fill factor and efficiency are maximum for photoelectrode annealed at 473 K. This is due to low resistance, high flat band potential, maximum open circuit voltage as well as maximum short-circuit current. The barrier-height was examined from the temperature dependence of the reverse saturation current. The utility of this work is in improving the efficiency of photoelectrochemical cell. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：350 / 352

页数：3

共 15 条

[1] Photoelectrochemical properties of electrodeposited CdSe and CdSe/ZnSe thin films in sulphide-polysulphide and ferro-ferricyanide redox systems [J].