Optoelectronic Characterization of Trivalent Europium Doped Gd2O3 and MGd2O4 (M = Ba or Sr) Nanophosphors for Display Device Applications

被引:13
作者
Singh, Devender [1 ]
Tanwar, Vijeta [1 ]
Bhagwan, Shri [1 ]
Sheoran, Suman [1 ]
Nishal, Vandna [1 ]
Samantilleke, Anura Priyajith [2 ]
Mari, Bernabe [3 ]
Kadyan, Pratap Singh [1 ]
机构
[1] Maharshi Dayanand Univ, Dept Chem, Rohtak 124001, Haryana, India
[2] Univ Minho, Dept Fis, P-4710057 Braga, Portugal
[3] Univ Politecn Valencia, Dept Fis Aplicada, E-46022 Valencia, Spain
关键词
Nanophosphors; Facile Gel Combustion Synthesis; Hexamethylenetetramine; Photoluminescence; Tunneling Electron Microscopy; LUMINESCENCE PROPERTIES; UP-CONVERSION; PHOTOLUMINESCENCE; EMISSION; TB; EU; GD; ER; TM; SM;
D O I
10.1166/jno.2016.1896
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Trivalent europium doped Gd2O3 and MGd2O4 (M = Ba, Sr) nanophosphors were synthesized by facile gel combustion process using hexamethylenetetramine as an organic fuel. The incorporation of Eu3+ ions in these materials had been studied by their photoluminescence properties. All these synthesized powders [Gd2O3 and MGd2O4 (M = Ba, Sr)] showed intense red emission due to 4f -> 4f transitions of Eu3+ ions. The emission spectra of prepared materials showed five peaks at similar to 581, 593, 612, 629, 652 and 708 nm. The main intense emission peak exhibited at 612 nm was attributed to D-5(0) -> F-7(2) the electric dipole transition of Eu3+ ion. The concentration quenching was also observed when activator concentration was added more than 4 mol% in these samples. The photoluminescence intensity for these materials were found to be increased with increase of sintering temperature and showed a maximum intensity when these sample were reheated at 1100 degrees C. The structure and morphology of these prepared materials had been examined by X-ray diffraction and tunneling electron microscopy respectively.
引用
收藏
页码:305 / 310
页数:6
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