Current issues in the physics of heavily doped semiconductors at the metal-insulator transition - Discussion

被引：0
作者：
Kravchenko, SV [1 ]
机构：
[1] CUNY City Coll, New York, NY 10031 USA
来源：
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1998年 / 356卷 / 1735期
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中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
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页码：155 / 156
页数：2
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