Interaction of ion-implantation-induced interstitials in B-doped SiGe

被引：1
作者：
Crosby, R. T. [1 ]
Jones, K. S.
Law, M. E.
Radic, L.
Thompson, P. E.
Liu, J.
机构：
[1] Univ Florida, SWAMP Ctr, Gainesville, FL 32611 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] Varian Semicond Equipment Associates, Gloucester, MA 01930 USA
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2007年 / 10卷 / 01期
关键词：
SiGe; ion-implantation; annealing; dislocation loops; transient enhanced diffusion;
D O I：
10.1016/j.mssp.2007.01.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
B-doped Si0.77Ge0.23 of various surface-doping levels was used to investigate the evolution of implant damage and the corresponding transient enhanced diffusion of boron as a function of boron concentration. These layers were implanted with a non-amorphizing 60 keV, 1 x 10(14) cm(-2) Si, and annealed at 750 degrees C. Plan-view transmission electron microscopy (PTEM) confirmed the formation and dissolution of dislocation loops. Transient enhanced diffusion (TED) is evident in the surface doped SiGe, but the low diffusivity of interstitials in Si0.77Ge0.23 and the presence of interstitial traps inhibited TED at the deeper B marker layer. (C) 2007 Elsevier Ltd. All rights reserved.
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页码：1 / 5
页数：5
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