Performance of liquid Xenon jet laser-produced-plasma light source for EUV lithography

被引：1

作者：

Suganuma, T ^{[1
]}

Abe, T ^{[1
]}

Komori, H ^{[1
]}

Takabayashi, Y ^{[1
]}

Endo, A ^{[1
]}

机构：

[1] EUVA, Hiratsuka Res & Dev Ctr, Hiratsuka, Kanagawa 2548567, Japan

来源：

FIFTH INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION | 2004年 / 5662卷

关键词：

extreme ultraviolet; EUV lithography; laser produced plasma; xenon jet; MOPA system;

D O I：

10.1117/12.596356

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The main technological challenge of a future extreme ultraviolet (EUV) light source is the required average power of 115W at the intermediate focus. High repetition rate laser produced plasma (LPP) sources are very promising to face this challenge. We report the current status of the laser produced plasma light source system under development at EUVA. The system consists of the following main components: The plasma target is a liquid xenon jet with a maximum diameter of 50 micrometer and a velocity of more than 35 m/s. A Nd:YAG laser oscillating at 1064 nm produces the plasma. The laser is a master oscillator power amplifier (MOPA) configuration with a maximum repetition rate of 10 kHz and an average power of 1 kW. The EUV system currently delivers an average EUV in-band power of 4 W (2% bandwidth, 271 pi) having a,ability of 1.54 % (1sigma, 50-pulse moving average), In order to evaluate a further increase of the repetition rate, xenon jet characteristics and EUV plasma images have been investigated at 10 kHz. In addition, a conversion efficiency of 0.74% (2% bw, 2pi sr) has been obtained at low repetition rate operation. This paper presents the progress of our LPP light source development.

引用

页码：367 / 372

页数：6

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